| 摘要 |
PURPOSE:To prevent the disconnection of a wiring layer formed to the surface of a semiconductor substrate by forming a metallic layer in tungsten, etc. on the wiring layer. CONSTITUTION:A MoSi2 layer 2 in 3,000Angstrom thickness is formed on a silicon dioxide layer 1 through an argon sputtering method, and processed through photoetching to form the wiring layer. A crack 2 is generated in the wiring layer 2 at a stepped difference section through heat treatment for thirty min at 1,000 deg.C in a nitrogen atmosphere. When the semiconductor base body is encased in a selective CVD device and a tungsten layer 3 is formed on the MoSi layer 2 in the thickness of 300Angstrom , the tungsten layer 3 buries the crack, and the conduction of the wiring layer can be recovered. |
