| 摘要 |
PURPOSE:To prevent the interline short-circuit of the titled semiconductor device by a method wherein a glass solution applying process is provided after the thermal oxidization process has been performed on a polycrystalline silicon layer. CONSTITUTION:After a dry oxide film and the pattern of silicon film have been formed on a silicon substrate 11, a field oxide film is formed on the region having no pattern by performing a thermal oxidization. Then, after the pattern and a dry oxide film have been removed and the first layer gate oxide film 15 have been grown, a region 16 to be turned to the first layer gate is formed by depositing polycrystalline silicon. Subsequently, after an oxide film 17 has been grown on a gate 16 and an oxide film 18 has been formed on the substrate by performing a thermal oxidization process, the films 15 and 18 are removed and coating glass is applied. After the end part of the first layer gate and a cut- out layer 19 have been coated with a coating glass layer 20, the second layer gate film is grown, thereby enabling to stop the scraping of the oxide film and to prevent the generation of the interline short-circuit. |
