| 摘要 |
PURPOSE:To form a single crystal silicon thin film of excellnt quality over a sufficiently wide area on an insulative film, by applying a laser beam having a beam width larger than the width of an insular insulative film such that the insular insulative film and a polycrystalline semiconductor film therearound are within the beam width. CONSTITUTION:On a single crystal semiconductor layer 1, an insulating film 2 is formed such as to be insularly divided. A polycrystalline semiconductor film 3 is formed on the film 2 and the layer 1 exposed therearound. An amorphous semiconductor or insulator film 4 equal in type to the film 3 is formed on parts of the film 3 above a part of each insular film 2 and a part of the layer 1 continuous therewith. A laser beam 5 having a beam width larger than the width of each insular film 2 is applied such that each insular film 2 and the film 3 therearound are within the beam width. Thus, it is possible to obtain over a wide area a single crystal thin film of excellent quality having no projection or crystal defect in its central part, unlike the method in which the film 4 is not provided. |
