| 摘要 |
PURPOSE:To form a single crystal film with an excellent reproducibility, by a novel method wherein a semiconductor film is formed on an amorphous insulative layer and simultaneously single-crystallized by moving a substrate or a shielding plate. CONSTITUTION:An Si oxide film 22 and an Si nitride film 23 are formed on an Si substrate 21 and are selectively removed with the part thereof on a linear region left. A thermal oxide film 24 is formed on the substrate 21, and the films 23, 22 on the linear region are removed to expose a substrate surface 25. The whole surface is flattened to prepare a sample 31 with a flat surface. The sample 31 is mounted on a stage 32 which is movable in the directions A and B and can be heated. A shielding plate 33 provided with a slit, and a lamp heater 34 are placed above the sample 31. This is placed in an electron gun evaporation apparatus, in which the sample 31 is heated and the substrate 21 is moved while silicon is being vacuum-evaporated through the slit and while the surface silicon layer is being melted on heating by the heater 34. Thus, a single crystal silicon film can be formed on an amorphous insulating film with an excellent reproducibility. |
