SEMICONDUCTOR DEVICE FOR AMPLIFYING MICROWAVES

摘要

A semiconductor microwave amplifier is described with a construction to suppress the formation of travelling domains producing unwanted oscillations. The device construction includes an active epitaxial layer on a substrate, and adjoining the active layer a higher resistivity part. Contacts are provided on the active layer. The active layer is given a thickness below the length of a domain that might have formed. An advantage is that the contact spacing and dopant concentration of the active layer is much less critical.