发明名称 DEPOSITED FILM FORMING DEVICE
摘要 PURPOSE:To contrive accomplishment of high utilizational efficiency of raw gas by a method wherein an introducing pipe of raw material having an aperture and an oxidizing agent introducing pipe are formed in multiconcentrical structure gas is introduced into a reaction space, and at lest one of the introducing pipe group is constituted with a porous pipe. CONSTITUTION:A porous introducing pipe 214 and an introducing pipe 215 having a slit-shaped aperture part are formed into a multiconcentrical structure. A plurality of substrates 213 are arranged in such a manner that the space located around the pipes 214 and 215 is filled up. The raw material, which will be turned to gas for formation of a deposited film, is introduced into the chamber 220 through the pipe 214, and the gaseous oxidizing agent which performs an oxidizing action is introduced into the chamber 220 through the pipe 215. By setting the specific temperature for the substrate 213 in advance, these gases generate chemical action, and an amorphous film is deposited on the base 213. As a result, the utilizational efficiency of the raw gas can be improved, a deposited film of large area can be obtained, and the improvement in productivity can be achieved.
申请公布号 JPS62152121(A) 申请公布日期 1987.07.07
申请号 JP19850292313 申请日期 1985.12.26
申请人 CANON INC 发明人 KANAI MASAHIRO;HIROOKA MASAAKI;HANNA JUNICHI;SHIMIZU ISAMU
分类号 H01L31/04;H01L21/205 主分类号 H01L31/04
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