| 摘要 |
PURPOSE:To permit the continuous formation of a thin film by measuring the thickness of the thin film onto a substrate in-process by a crystal oscillation method and measuring at least either of the reflectively and transmittance combining the reflectivities and transmittances of the thin film and the substrate in-process. CONSTITUTION:The thin film is deposited on a crystal resonator 111 housed into a crystal resonator monitor head 110 and the change signal of the natural frequency thereof is fed to a crystal resonator sputtering speed controller 112 which makes the feedback control of a power source 113 for sputtering until the sputtering speed Vc set in the controller 112 coincides with the actual sputtering speed V. The prescribed sputtering speed is thus obtd. The sputtering speed is integrated with the time t so that the film thickness signal (d) can be outputted from the controller 112. A reflectivity measuring instrument 114 having a light emitting part 115 and light receiving part 106 is installed above the disk substrate 108 to measure the momentarily fluctuating reflectivity according to the formation of the thin film from the substrate 108 side.
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