| 摘要 |
PURPOSE:To obtain a P type silicon carbide semiconductor by simultaneously sputtering silicon and aluminum which sets aluminum concentration to specific 5-atom% or less for semiconductor to be formed under the mixed gas ambient. CONSTITUTION:Aluminum is uniformly arranged on a polysilicon target 16. The gas consisting of ethane, argon and hydrogen is used as a mixed gas. Amount of aluminum is set to that which makes aluminum concentration of 5-atom% for the semiconductor to be formed. Aluminum is sputtered simultaneously with the silicon. Thereby, the P type silicon carbide film is formed on the substrate 17. |
