| 摘要 |
<p>PURPOSE:To obtain a thin-film transistor, in which the lowering of OFF resistance is inhibited minimally even under optical irradiation and threshold voltage is not increased and which operates at low voltage, by optimizing the thickness of an I-type a-Si film as a channel section. CONSTITUTION:A gate electrode 2 consisting of Cr is formed onto a glass plate 1, the gate electrode 2 is coated with a gate insulating film 3 composed of SiNx through a plasma vapor phase growth method and an I-type a-Si film 4, thickness (d) thereof is less than 350Angstrom , particularly, 100-200Angstrom , is superposed on it continuously according to a conventional method. A protective film 5 made up of SiNx in approximately 1,000Angstrom is deposited, and patterned. N<+> type a-Si 6 is deposited on the whole surface, the layers 4 and 6 are patterned in the same size and source-drain electrodes 7, 8 in Al are attached, and lastly an N<+> type a-Si layer 6c just above a channel section is removed, thus completing the titletransistor. According to the constitution, the TFT having an ON- OFF ratio of 1X10<4> or more is acquired by the optical irradiation of 5X10<4>lx, thus lowering the deterioration of OFF resistance,then also preventing the increase of threshold voltage.</p> |
