| 摘要 |
PURPOSE:To improve the quality by reducing the number of manufacturing processes by a method wherein the ion implantation for forming substrate side electrodes of capacitor elements and that for forming the element isolation layers of a MOS transistor integrated together with the capacitor elements are performed at the same time. CONSTITUTION:P type wells 2 are formed in the N type Si substrate 1. Photo resist masks 17 are formed on an oxide film 3, and boron ions are implanted. The photo resist masks 5 are formed on a nitride film 4 and etched by plasma. Field oxide films 7 are formed by annealing and thermal oxidation. The element isolation layers 8 and the electrode layer 13 on the side of the substrate 1 of the capacitor element are formed at the same time. Gate oxide films 9 are newly formed by thermal oxidation. This method is effective also to the case of the manufacture of a complementary type MOS integrated circuit device having a P or N-channel enhancement MOS transistor and an N or P-channel depletion MOS transistor. |
