| 摘要 |
PURPOSE:To simultaneously form micro-miniaturized pattern and smoothed stepped portion simultaneously by leaving an insulating layer to the stepped portion of sharp edge of conductive layer obtained by physical etching while smoothening leaving insulating layer. CONSTITUTION:A high precision wiring pattern is formed by applying physical etching to a polysilicon 3. After removing a photoresist mask4, a silicon oxide film 7 is formed in the thickness of 0.7mum over the entire part of the surface. The physical etching is then executed on the entire part of oxide film 7 under the C3F3 plasma generated between the parallel electrodes. When the etching is continued until the oxide film 7 on the silicon 3 or oxide film 2 is removed, the silicon oxide film 7a remains at the stepped portion. Thereby, in case an insulating film 5 and an aluminum Al wiring 6 are formed thereon, problem of disconnection or short-circuit at the stepped portion is no longer generated.
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