| 摘要 |
PURPOSE:To prevent the generation of parasitic channels securely by a method wherein an impurity of the same conductivity type as the substrate is effectively doped to the side part of a groove part which composes the field region of the semiconductor substrate. CONSTITUTION:After forming a thermal oxide film 2 on the substrate 1, the first mask pattern 3 composed of a polycrystalline Si film or a metallic film is formed on the element forming region of the substrate, and next the second mask pattern 6 composed of a metal silicide is formed at the side part of the pattern 3, and then the film 2 and the substrate 1 are selectively etched with the pattern 3 and 6 as the mask, resulting in the formation of the groove part 7. The pattern 6 is removed, and the impurity B<+> of the same conductivity type as the substrate is doped to the substrate 1 with the pattern 3 as the mask; thereafter a SiO2 film is buried into the groove part 7. |
