Surface deposition of layers from gas phase - using mechanical means for gas film control over substrate

摘要

For the depsn. of a material formed by decompsn. of gaseous cpds. on a heated substrate, during which the substrate and the decomposable gas are moving in relation to each other, the thickness of the gas film on the substrate to be coated is reduced by mechanical means. Pref. knives are rotated at a prest gap over the substrate surface. The process permits speeding up of the otherwise very slow depsn. process preventing formation and depsn. of by-products. It is used for deposn. of films of e.g. pyrographite, Si, B, Fe various borides, nitrides and carbides.