| 摘要 |
PURPOSE:To prevent the closure of channels by enhancing the concentration at the center of the gate by a method wherein heat treatment is performed after epitaxial growth. CONSTITUTION:Cut grooves 6 are formed by utilizing an oxide film 2 on an N type substrate. Next, the grooves 6 are filled by doping boron by epitaxial growing method. Then, a P type diffused layer 7 is formed by heat treatment at a temperature higher than that at the time of epitaxial growth. The epitaxially grown layer Z' is removed. An N type Si single crystal 5'' is formed. The concentration of the gate which performs burial and the gate which contacts a layer of reverse conductivity type is reduced by epitaxial growth and heat treatment which follows it, thus enhancing the concentration at the center of the gate; therefore leakage current becomes small. |
