发明名称 HERMETIC SEALED SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the yield of holes such as blowholes in glass and to obtain a highly reliable semiconductor device having the good appearance of the glass after sealing at a high yield rate, by using a low melting point sealing material at the inner and outer sides of a part to be sealed, using a high melting point sealing material at the intermediate side, and performing the sealing. CONSTITUTION:A base 5 and a cap 1 are sealed with sealing materials and a semiconductor element 6 is packaged in an airtight manner. In this type of an airtight package type semiconductor device, sealing materials 2-4 having the different melting points are used as the sealing materials. The low melting point sealing material 2 is used at the inner side of a part to be sealed. The high melting point sealing material 3 is used at the intermediate side of the part to be sealed. The low melting point material 4 is used at the outside. Thus the sealing is performed. For example, the low melting point glass 2 is applied on the inner side of the peripheral part of the back surface of the ceramic cap 1. The high melting point glass 3 is applied on the intermediate side. The low melting point glass 4 is applied on the outside. The base comprising a ceramic substrate and said cap are fused and field through a belt furnace for sealing. Thus blowholes are prevented, and the semiconductor device characterized by the good appearance and high commercial value is obtained.
申请公布号 JPS62154763(A) 申请公布日期 1987.07.09
申请号 JP19850292696 申请日期 1985.12.27
申请人 HITACHI VLSI ENG CORP;HITACHI LTD 发明人 TSUBOI TOSHIHIRO;OOTA TADAAKI;SATO KEIICHI;HONDA ATSUSHI;MIWA TAKASHI
分类号 H01L23/10 主分类号 H01L23/10
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