| 摘要 |
PURPOSE:To cause the charge transfer part to read signal charges like the frame accumulation mode to reduce the blooming by making common the readout gate to the charge accumulation part. CONSTITUTION:Charge accumulation portions 211-216 and a charge transfer part 22 are adjacently formed on a single surface of a semiconductor substrate 20, transfer electrodes 231-234 are insulated using an insulating film 24, and a part of accumulation portions 211-215 is exposed. These portions are integrally formed. Common signal readout gates 251, 252 are arranged to such accumulation portions 211-215 to read simultaneously the charges of the accumulation portions 211-215 adjacently provided in the vertical direction 26. The partial electrodes 231, 233 on the transfer part 22 are used also as the electrodes of gates 251, 252. A first electrode 27 is separately formed for each picture element so that a part of the substrate 20 is placed in contact with the accumulation portions 211-215. Moreover, a second electrode 30 is separately formed at a specified interval on the insulating layer 28 for each picture element, thereby reducing the blooming of a solid state image pickup device. |
