| 摘要 |
PURPOSE:To obtain semiconductor thin films through discharge sputtering at a high speed by a method wherein the discharge is effected between the surface of an evaporation material and an anode ring. CONSTITUTION:The lower end of a contactor 16 is brought into contact with an evaporation material 13, impurity gas is supplied 12 to a housing part 9 of a crucible 7. An anode ring 14, contactor 16 and the crucible 7 are energized while supplying cooling water 10 to a passage 8. When the surface of the evaporation material 13 is red-heated, the contactor 16 is lifted up and an arc is caused between the evaporation material surface and the anode ring. At the time when the arc is stabilized and fine particles of the evaporation material 13 as well as molecules and atoms of impurity gas begin to scatter actively, a shutter 21 is moved so that the scattered matters are adhered on a substrate 19 to form a semiconductor thin film. By so doing, it is made possible to reduce the output voltage of a power source 18 and to obtain a semiconductor thin film of rough film surface structure and larger surface area through arc sputtering. This is advantageous in the manufacture of solar cells with high efficiency. |
