| 摘要 |
PURPOSE:To contrive to enhance optoelectric conversion efficiency at the semiconductor device constructed of non-single crystal semiconductors having P-I-N junction by a method wherein oxygen and carbon mixed in a cluster type in the I-type layer are made to extremely low concentration. CONSTITUTION:A transparently conductive film 33, and the P type silicon carbide or the P type silicon semiconductor layer 34 are formed on a glass substrate 32. Then the I-type layer 31 is formed thereon according to refined silane, and the N type semiconductor layer 35 is formed thereon. After then, a metal electrode 36 is formed on the layer 35. At this case, oxygen of the I-type layer 31 is made to 5X10<18>cm<-3> or less, and moreover carbon mixed in the cluster type is made to 4X10<18>cm<-3> or less. Accordingly, the more the oxygen and carbon are reduced, the more the conversion efficiency as the optoelectric conversion device is enhanced, and moreover reliability is improved. |
