| 摘要 |
PURPOSE:To obtain a shallow N<+> layer of high concentration rapidly in a mass production manner by decomposing AsH3 under decompression, depositing a high-concentration As film on a substrate and using the As film as a diffusion source. CONSTITUTION:AsH3 Gas is excited by Ar plasma or ultraviolet rays, laser rays or the like outside a reaction pipe 5 and introduced into the pipe, and heated by a heater 6, decomposition is accelerated or assisted, the As film 9 is deposited at a rate of 50-100Angstrom /min at 400-800 deg.C from AsH3 of 0.1-2Torr, and the film 9 is brought into contact with a P layer 2 on the N type Si substrate 1. Poly Si 10 containing As is superposed according to a normal method, the scattering of As in the film 9 is prevented, and the depth of an N type diffusion layer is controlled. The shallow N<+> layer is formed in the P layer 2 through selective diffusion at a fixed temperature. Since the high-concentration As film, As concentration therein is stabilized, is used as the diffusion source, the shallow N<+> layer 11 can be formed easily, variance is eliminated, and a crystal defect is not also generated. |
