| 摘要 |
PURPOSE:To obtain the semiconductor device, in which a resistance region consisting of a conductor can be formed in a small area, by connecting the resistance region to an electrode body through an insulating resistance film formed through a plasma chemical vapor growth method. CONSTITUTION:The insulating resistance films 6 are brought to a plasma state by applying a strong electric field of a gas of silane, ammonia, nitrogen, etc. at a temperature of 300-400 deg.C, and vapor-grown to a P type diffusion layer 2 as Si3N4. According to the constitution, since the silicon nitride films 6 are not changed into complete insulating films and are formed in structure in which currents leak partialy, dielectric breakdown is not generated so far as sufficiently large voltage is applied, and the films 6 display approximately ohmic property. Consequently, the area of the diffusion layer 2 can be reduced to a half or less because one part of resistance value can be obtained by the films 6. |
