| 摘要 |
PURPOSE:To obtain the semiconductor device, in which an excellent epitaxial growth layer is acquired, by thermally treating a substrate at a specific temperature in an oxidizing atmosphere and removing an oxide film formed to the surface of the substrate. CONSTITUTION:A wafer is divided into halves and one of them is thermally treated in an oxygen atmosphere for 1.5hr at 1,000 deg.C or more such as 1,100 deg.C, the oxide film formed is removed by hydrofluoric acid, the wafer is entered in an epitaxial growth oven, and a silicon epitaxial layer is grown in 5mum. The other is entered in the epitaxial growth oven as it is forcomparison, and an epitaxial layer is grown only by the same film thickness. Both layers are grown in an epitaxial manner through a normal method in which the surface layer of the substrate in 0.5mum is removed in a mixed gas atmosphere of HCl+H2 at 1,200 deg.C and the layer is grown at a growth rate of 1mum/min at 1,200 deg.C by using a mixed gas of SiCl4+ H2. Stacking faults are decreased and defects induced on epitaxial growth can also be reduced in the growth layer forme a in this manner. Defects difficult to be observed or defects, etc. observed as pits of shallow bottoms, shallow pits, can also be reduced remarkably. |
