发明名称 PREPARATION OF CDTE CRYSTAL
摘要 PURPOSE:To prepare a CdTe crystal having uniform characteristics and high quality, easily, by putting Cd and Te in a quartz ampule wherein the amount of Cd is made slightly excess to the stoichiometric amount, evacuating the ampule, sealing the ampule so as to leave a specific space volume, and heating and cooling the contents. CONSTITUTION:Cd and Te are charged in a quartz ampule at the stoichiometric ratio, and a specific amount of Cd is added thereto. A quartz plug is inserted into the ampule, and the ampule is evacuated to a vacuum of about 10<-5>pa. The quartz plug is welded to the whole inner circumference of the quartz ampule, wherein the space volume of the ampule is selected to attain the optimum Cd vapor pressure caused by the excess Cd at the melting point of CdTe to keep the proper composition of CdTe. The quartz ampule is inserted, e.g. in a Bridgman furnace, heated, and cooled to obtain a CdTe crystal having uniform characteristics under specific Cd vapor pressure.
申请公布号 JPS5935086(A) 申请公布日期 1984.02.25
申请号 JP19820143792 申请日期 1982.08.19
申请人 YOKOGAWA HOKUSHIN DENKI KK;NIHON DENSHI KOGYO SHINKOU KIYOUKAI 发明人 TAKEUCHI YOUJI;KITAMOTO TAKASHI;SUZUKI JIYUNICHI
分类号 C30B11/00;C30B11/04;C30B29/48;H01L21/02 主分类号 C30B11/00
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