| 摘要 |
PURPOSE:To achieve the growth of an n type epitaxial layer having high crystallinity in the preparation of an n type semiconductor using a liquid-phase epitaxial growth method, by setting the concentration of the donor impurity for doping at a level above the concentration of the residual acceptor. CONSTITUTION:An n type GaP substrate doped with S as a donor impurity at 980 deg.C is made to contact with a GaP solution doped with Te as a donor impurity at the same concentration as that of S. The system is heated for >=10min to increase the concentration of the impurities at the interface of both components, and cooled slowly to effect the epitaxial growth of a GaP crystal. The growth of the n type epitaxial layer begins before the S diffused from the substrate into the solution is separated far from the n type GaP substrate, and consequently, the donor concentration in the n type epitaxial layer becomes high at the initiation of growth, and the formation of p type inversion layer can be prevented. An n type GaP epitaxial layer having low donor concentration and excellent crystallinity can be prepared by this process. |
