| 摘要 |
PURPOSE:To obtain a silicon single crystal containing a proper amount of oxygen, by contacting molten silicon with silicon oxide in the course of pulling the silicon single crystal from molten silicon using a silicon nitride or silicon carbide crucible. CONSTITUTION:High purity molten Si 3 is put into a graphite crucible 2 lined with an Si3N4 or SiC layer 1, and a silicon single crystal 4 is pulled by using a seed silicon crystal. In the above process, a material 5 obtained by coating the tungsten core weight 7 with a silicon oxide 6 such as SiO2 or SiO (e.g. quartz glass) is sent to the bottom of the crucible 2. The pulled silicon single crystal 4 contains the oxygen transferred from the material 5, and the silicon wafer prepared therefrom is free from the problems of strain-development during thermal treatment which are inherent to the wafer prepared from oxygen-free silicon single crystal. |
