MAGNETO-RESISTANCE EFFECT ELEMENT

摘要

PURPOSE:To form an MR element whose direction of magnetization and strength of anisotropic magnetic field are controlled by the magnetic field anisotropy induced in magnetostatic manner by a method wherein surface unevenness is formed on the base surface whereon an MR film is deposited by vapor. CONSTITUTION:Unevenness stepwise differences 12 are so formed as to make an angle of approx. 45 deg. between the current passed through the MR film 13, on the surface 14 of a supporting substrate 11 for the MR film 13 which makes a quadrilateral. The MR film 13 is deposited by vapor on the surface of the substrate 11 provided with the unevenness 12. Thereby, the MR film 13 is formed according to the surface unevenness of the substrate 11. Electrodes 15 are so formed at both ends of the MR film 13 as to supply a fixed current through the MR element 13. A shield film 17 is electrically insulated by an insulation film 16 from the MR film 13 and the electrodes 15. The formation of the MR film on the substrate provided with the unevenness in linear form of a pitch P and a depth D makes the axis of easy magnetization of the MR film direct to the direction along the surface unevenness of the substrate and also enables to control the strength of anisotropic magnetic field HK by the pitch and the depth of unevenness.