发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To ensure the fine control of a delay with absence of noise, by applying a DC voltage from the outside to the gates of MOS transistors which are set in series to a signal transmission line. CONSTITUTION:An output terminal D is set at level H when MOS transistors TR1, 4 and 5 are turned off, and TR2, 3 and 6 are turned on, respectively. The potentials of terminals C and G are set at level H when the TR1 and TR2 are turned on and off, respectively. The potential of the terminal G is set at level H in lagging from the terminal C owing to the on resistance of an MOSTR8. The potential of the terminal D is set at level L in lagging from the terminal G by the function of an MOSTR6. These lags are controlled by changing the gate applied voltage of the TR8, then the on resistance. The noise is reduced less than a case where the voltage is applied to a signal transmission line K, and it is possible to control a fine delay of the degree of several nano seconds.
申请公布号 JPS5934723(A) 申请公布日期 1984.02.25
申请号 JP19820144936 申请日期 1982.08.20
申请人 MITSUBISHI DENKI KK 发明人 MIYATAKE HIDEJI
分类号 H03K5/00;H03K5/13;H03K17/28 主分类号 H03K5/00
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