| 摘要 |
PURPOSE:To enable to improve the sensitivity of Hall elements and contrive to avoid a yoke which becomes the hindrance in the assembling by a method wherein a substance and a compound semiconductor material layer are coated with mold resin mixed with the powder of a ferromagnetic substance. CONSTITUTION:The Hall element is composed of the compound semiconductor layer 12 deposited by vapor on the substrate 11, leads 13 connected to both ends of the compound semiconductor material layer 12, and the mold resin 14 mixed with the powder of a ferromagnetic substance which molds the entire body. As the substrate 11, silicon is used; a wafer formed one used for manufacturing a semiconductor element is used for the silicon, and the one with an Si oxide film is used for the surface. As the compound semiconductor material layer 12, InSb, GaAs, etc. that has a large mobility and Hall coefficient RH is used. The leads 13 are connected to both of the compound semiconductor material layer 12 by means of bonding fine wires by nail head bonding method using a punching frame of a metallic plate. |
