发明名称 DICING DEVICE FOR SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To lengthen the life of a conductive material, and to prevent trouble due to the effect of abrasion powder by bringing a discoid blade into contact only on the setting of a zero reference point when a spindle shaft turned at ultra-high speed by the conductive mterial is grounded in the device dicing the semiconductor wafer by turning the blade at ultra-highspeed. CONSTITUTION:When setting the zero reference point of the rotary blade, 5V potential is applied to a stage 13 while a solenoid valve 12 is opened, a contact spring 8 and a nut 2 are brought into contact by air blown off from an air nozzole 6, and the blade 4 turned at ultra-highspeed is dropped. The blade 4 further drops, and is in contact with the surface of the stage 13 while 5V potential applied to the stage 13 is grounded, and the solenoid valve 12 is closed. Accordingly, the contact spring 8 and the nut 2 are brought to a noncontacting state, and the zero reference point of the blade 4 is set completely while the blade rises only by the quantity of the wafer left on cutting required for dicing from the zero reference point.</p>
申请公布号 JPS5934636(A) 申请公布日期 1984.02.25
申请号 JP19820145656 申请日期 1982.08.23
申请人 KIYUUSHIYUU NIPPON DENKI KK 发明人 FUJIKI SHINJI;UEDA YUUJI
分类号 H01L21/301;B28D5/00;(IPC1-7):01L21/304 主分类号 H01L21/301
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