| 摘要 |
PURPOSE:To prevent a semiconductor wafer from generation of a reaction with plasma gas by a method wherein a second insulating film of upper layer is patterned according to plasma etching using a first insulating film as the etching obstructing film, and the first insulating film is etched using the pattern of the second insulating film as the mask. CONSTITUTION:The first insulating film 20 of 5,000-10,000Angstrom film thickness consisting of a silicon oxide film is adhered, and moreover the S-I-N film 16 is adhered thereon at 5,000-10,000Angstrom film thickness as the second insulating film. Then, the S-I-N film 16 of the second insulating film is etched by plasma according to CF4/O2/N2 mixed gas to remove the S-I-N film 16 on a dicing line 13 and to open a through hole 17. At this time, the first insulating film 20 acts as the etching obstructing film against plasma etching, and a silicon substrate 11 under the dicing line 13 is prevented from exposure even when etching is performed having sufficient scope. After then, the wafer thereof is immersed in an etching liquid of fluoric acid, and using the S-I-N film 16 as the mask, the exposed part of the first insulating film 20 is etched to be removed. |
