| 摘要 |
PURPOSE:To obtain an MOS type semiconductor device which can be controlled stably at its threshold voltage by doping acceptor atoms of boron or the like in an Si region which is isolated in an MoSix film, thereby stabilizing the work function of metal silicide for forming a gate electrode. CONSTITUTION:A gate oxidized film 24 is formed on the surface of an insular substrate 21 which is isolated by a field oxidized film 22, and an MoSi2.5 film 25 is accumulated by sputtering method on the overall surface. Boron ions are implanted as acceptor atoms on the overall surface of the film 25. Subsequently, the film 15 is patterned to form a gate electrode 26. With the electrode 26 and the film 22 as masks, an N type impurity, e.g. arsenic is ion implanted on the surface of the substrate 21, activated in an oxygen atmosphere, and n<+> type source and drain regions 27, 28 are formed. Then, a CVD-SiO2 film 29 is accumulated on the overall surface, the regions 27, 28 and the film 29 are selectively removed to open contacting holes 30,..., an aluminum film is then deposited on the entire surface, patterned to form aluminum wirings 31-33, and an n-channel MOS transistor is manufactured. |
