FORMATION OF INSULATING FILM ONTO SURFACE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form the titled film in a comparatively short time utilizing efficiently gas containing Si by a method wherein the insulating film containing Si is formed according to the electron cyclotron resonant plasma CVD method using electron cyclotron resonant plasma in the condition that the semiconductor device such as mesa type photo diode is held at the temperature of room temperature -150 deg.C. CONSTITUTION:A mesa type photo diode D is formed in the mesa type with a laminate 4 according to an N type semiconductor layer 2 consisting of InP and an N type semiconductor layer 3 consisting of InGaAs on a P type semiconductor substrate 1 consisting of InP, and electrodes 5, 6 are fixed thereto. The insulating film 20 of composition containing Si is formed according to the electron cyclotron resonant plasma CVD method using electron cyclotron resonant plasma according to gas containing Si in the condition that the mesa type photo diode D is held at the temperature of room temperature -150 deg.C. A heat treatment according to the temperature of 150-200 deg.C is performed for 1-4hr, and the insulating film 20 is obtained as the aimed insulating film 30.