| 摘要 |
PURPOSE:To enable to improve the withstand voltage of a semiconductor pressure sensor at the negative side by bonding a nitrided silicon layer formed at the peripheral edge of a main surface formed on a recess of a pressure receiving diaphragm to a seat formed of a material or silicon having thermal expansion coefficient in the vicinity of the silicon. CONSTITUTION:An oxidized silicon layer 6 having a thickness of approx. 5,000Angstrom is formed by steam oxidation on the surface of the side contacted at the peripheral edge 1a with a base on a pressure sensitive pellet 1, and a nitrided silicon layer 7 having a thickness of approx. 1,000Angstrom is covered. The layer 7 is bonded to a seat 2 via a low melting point glass layer 3 having a thickness of approx. 30mum as one example, and the pellet is bonded to the seat. The nitrided silicon layer is formed as a mask of etching on a wafer in case of forming the pellet. |
