| 摘要 |
PURPOSE:To prevent a metal layer from etching according to an etching treatment to be performed afterward using a positive type resist film, and to obtain a semiconductor device of high reliability by a method wherein an alkali-proof thin film is formed on the metal layer. CONSTITUTION:The alkali-proof thin film 14 using a silicon nitride film, etc., not to be corroded by a strongly alkaline organic solvent is formed at about 300Angstrom thickness according to a plasma treatment, for example. Then the positive type resist film 15 is formed as to cover a gate region containing the gate electrode 13 formed with the alkali-proof thin film 14 on the surface. A photoetching treatment is performed, and the positive type resist film 15 on the gate region is removed according to strongly alkaline positive type developer. The prescribed conductive type impurity ions are implanted using the resist film 15 formed with the opening part 16 on the gate region by this way and the gate electrode 13 as the mask. When the part on the gate electrode 13 of the positive type resist film 15 is to be removed like this, because the alkali-proof thin film 14 is formed on the gate electrode 13, narrowing of width of the gate electrode 13, or formation of a defect of pinhole, etc., according to the positive type developer is obstructed. |
