| 摘要 |
PURPOSE:To enable to inexpensively perform the formation of an ohmic contact electrode onto a semiconductor element by employing the steps of forming a oxidized metal film, forming the first and second metal layers and forming the ohmic contact electrode. CONSTITUTION:At least one of metal oxides selected from In2O3, SnO2, Sb2O5, Ta2O5, SiO2 is preferable as a reflection preventive film material, and among which In2O3, SnO2 forming conductive metal oxide in the form of In2O3 or SnO2 are preferable. Further, when these metal oxide film is formed, a doping material is added so as to enhance the conductivity, and when In2O3-SnO2 or SnO2- Sb2O5 is employed, the effect can be performed at best. One of metals of Ti, Ce, Sc, Zr, Hf, La, Y is effective as the metal having low oxide production energy from the Si used for the first metal layer. The metal used for the second layer is necessary to be selected from the metals of Ag, Au, Pt, Pd, Ni, Cr which are relatively stable for oxidation. |
