Process for the preparation of silicon carbide

摘要

Single crystals (30) of the 6H modification of silicon carbide SiC are obtained by sublimation and partial decomposition of industrial silicon carbide and growth on a seed (10) in a reaction chamber (2) under protective gas. According to the invention, the temperature gradient in the growth direction in the reaction chamber (2) is restricted to 25 DEG C/cm and the seed (10) is held at a temperature of about 2,100 to 2,300 DEG C and the pressure of the protective gas is adjusted so that it is at least as high as the sum of the gas pressures of the components during the deposition. Using this process, single crystals having a length of several centimetres are obtained. <IMAGE>