| 摘要 |
PURPOSE:To prevent a semiconductor element from generation of inferiority, and to enhance yield by a method wherein when a semiconductor wafer is to be pasted to a processing board by wax, etc., chemical-resistant and heat-resistant thin film protective wax is applied previously to the pasting face, and cutting by blade and etching are performed in order to the semiconductor wafer after the wafer is pasted. CONSTITUTION:Liquid type wax 50 for protection from etching is applied by spin application to the whole of the surface of the semiconductor wafer 3 as not to generate unevenness of film thickness, and is spontaneously hardened. The processing board 1 is heated by a heater to be warmed up, and solid wax 2 of the prescribed quantity is molten thereon from the upper part. The semiconductor wafer 3 is put thereon placing the surface under, and a weight jig 4 is put thereon from the upper part. Because the thin film of protective wax 50 previously applied to the semiconductor wafer 3 has heat resistance, it is not molten even when it comes in contact with wax 2 in the molten condition on the processing board 1, and moreover it is not mixed with wax 2, and remains as it is on the surface of the semiconductor wafer 3. Wax 5 for protection from etching is applied on the back, blade work conformed to semiconductor chip size is performed according to a multiblade device at the blade angle of 30 deg., and the semiconductor element 51 formed in reverse level structure by performation of etching is obtained. |
