发明名称 |
MONOLITHIC INTEGRATED CIRCUIT AND MANUFACTURE OF THE SAME |
摘要 |
A monolithic integrated circuit of either the MOS or CMOS type comprises an intermediate layer of polycrystalline silicon, a layer of a silicide of a refractory metal overlying said polycrystalline silicon layer, and regions of preset area and preset paths formed in the polycrystalline silicon layer and the silicide layer; the preset area regions and preset paths forming respectively high resistivity resistances and low resistivity interconnection lines for an intermediate connection level. |
申请公布号 |
JPS62154778(A) |
申请公布日期 |
1987.07.09 |
申请号 |
JP19860295058 |
申请日期 |
1986.12.12 |
申请人 |
SGS MICROELETTRONICA SPA |
发明人 |
RIBIO BARUDEI;PAORO GIUZETSUPE KAPERETSUTEI;FURANKO MAGIONI |
分类号 |
H01L27/092;H01L21/3205;H01L21/768;H01L21/8234;H01L21/8238;H01L23/52;H01L23/528;H01L23/532;H01L27/06;H01L27/088;H01L29/78 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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