| 摘要 |
<p>@ A magnetic-bubble memory device comprising a bubble propagation track defined by patterns of magnetically soft material, along which track magnetic bubbles propagate in response to an in-plane rotating magnetic drive field. The bubble propagation track has a first track (20) and a second track (21) interconnected by a turn and defined by known hook-shaped wide-gap patterns (23, 24) or by modified wide-gap patterns. The turn comprises a crooked bar-shaped pattern (25). One end portion of the end pattern (23) of the first track (20) is positioned opposite and preferably substantially perpendicular to the inner edge (25a) of the crooked bar-shaped pattern (25), and one end portion of the crooked bar-shaped pattern (25) is positioned adjacent to the end pattern (24) of the second track (21). Such a bubble propagation track makes it possible to realize a 4 µm period, 4Mb bubble memory. For a 180° turn, the turn pattern may comprise an auxiliary crooked bar-shaped pattern (36) in addition to the first bar-shaped pattern (35, Figure 20).</p> |
