| 摘要 |
<p>A semiconductor memory device includes charge storage type memory cells (MC1 to MCN), word lines (WL1 to WLN) and a bit line (BL) connected to the memory cells (MC1 to MCN), a sense amplifier (4) for detecting the memory data on the bit line (BL), and a voltage push-up circuit (TR1, TR2, Cl, 6) for setting up a potential on the bit line (BL). The voltage push-up circuit (TR1, TR2, C1, 6) at first sets the potential on the bit line at a power supply voltage level after the memory data having a high logic level is detected by the sense amplifier (4), and then pushes up the potential on the bit line (BL) to a higher potential level than the power supply voltage.</p> |
