发明名称 |
Nonplanar substrate injection lasers grown in vapor phase epitaxy |
摘要 |
In a semiconductor injection laser with a nonplanar pattern in the substrate, growth of the plurality of layers comprising the laser structure is accomplished in vapor phase epitaxy to produce a lateral spatial thickness variation (LSTV) in the active region of the laser. The LSTV profile is one of or combination of the profiles disclosed in FIG. 2, producing an effective, although small, lateral refractive index variation in the active region, thereby permitting the maintenance of the lowest order transverse mode along the plane of the active region.
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申请公布号 |
US4433417(A) |
申请公布日期 |
1984.02.21 |
申请号 |
US19810268596 |
申请日期 |
1981.05.29 |
申请人 |
XEROX CORPORATION |
发明人 |
BURNHAM, ROBERT D.;SCIFRES, DONALD R.;STREIFER, WILLIAM |
分类号 |
H01S5/00;H01S5/20;H01S5/223;H01S5/24;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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