THIN FILM DIODE

摘要

PURPOSE:To increase the mobility of carriers and make a large current flow with a high speed and facilitate high speed switching operation by a method wherein extra-thin film laminated units constituted by at least two types of semiconductor extra-thin films which are laminated alternately provided and electrode layers are formed on respective facing ends of the extra-thin film laminated units. CONSTITUTION:A pair of extra-thin film laminated units S1 and S2 which are constituted by semiconductor extra-thin films (a) made of amorphous Si:H and semiconductor extra-thin films (b) made of amorphous SiC:H laminated alternately are formed on a glass substrate 1. 1st electrode layer E1 made of chrome is formed between the laminated units S1 and S2 to connect them together and 2nd and 3rd electrode layers E2 and E3 made of platinum are formed on the respective ends outside the extra-thin film laminated units S1 and S2 to constitute a diode element. With this constitution, as a super-lattice structure in which potential wells are formed periodically along the direction of the layer thickness is provided, the mobility of carriers along the boundaries of the semiconductor extra-thin films is larger than that in a single layer semiconductor layer so that the high carrier mobility can be obtained.