| 发明名称 |
Method for improving luminescence and electrical properties in semiconductor materials by electron irradiation at liquid nitrogen temperatures |
| 摘要 |
Luminescent materials are formed by annealing a luminescence sample with a high energy electron beam at temperatures near the vicinity of liquid nitrogen temperatures.
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| 申请公布号 |
US4432810(A) |
申请公布日期 |
1984.02.21 |
| 申请号 |
US19820353128 |
申请日期 |
1982.03.01 |
| 申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
SICIGNANO, ALBERT;WERKHOVEN, CHRISTIAAN J.;VAN DER WEG, WERNER F. |
| 分类号 |
C09K11/08;(IPC1-7):H01L21/26 |
主分类号 |
C09K11/08 |
| 代理机构 |
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