| 摘要 |
PURPOSE:To micro-miniaturize the ion implantation area and make thin the mask by providing the mask covering non-implanting area on the surface of solid such as semiconductor and inclining the end surface of mask from the perpendicular line on the surface of solid on the occasion of implanting the ion only to the specific region. CONSTITUTION:An ion implantation mask 2' of specified pattern is formed on a substrate 1 consisting of a semiconductor or magnetic material and an implanted area is formed by obliquely implanting ion beam to the exposed surface of substrate 1 with inclination angle of beta. In such constitution, the end surface of mask 2' is inclined by an angle of alpha from the perpendicular line on the surface of substrate 1. This angle alpha is almost equal to an inclination angle beta of ion 3 or a little larger than the inclination angle beta. Thereby, the shadow 4 of implanting surface by mask is not generated and the implanting area can be microminiaturized and thickness of mask can also be reduced. |
