发明名称 |
Amorphous switching device with residual crystallization retardation |
摘要 |
A residual crystallization retardation layer is provided between the non-crystalline switchable semiconductor layer and each electrode structure. Amorphous germanium, silicon or carbon form good crystallization retardation layers and also minimize electromigration and reduce solubility of tellurium in the electrodes.
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申请公布号 |
US4433342(A) |
申请公布日期 |
1984.02.21 |
申请号 |
US19810251106 |
申请日期 |
1981.04.06 |
申请人 |
HARRIS CORPORATION |
发明人 |
PATEL, VIPIN N.;CONARROE, JR., JOHN L. |
分类号 |
H01L45/00;(IPC1-7):H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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