发明名称 Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices
摘要 A method of forming a superconductor-barrier-superconductor junction device by the steps of depositing a first superconductive layer on a substrate, forming a barrier layer on the first superconductive layer and depositing a second superconductive layer on the barrier layer. A layer of photoresist is then deposited over the second superconductive layer and patterned together with the second superconductive layer to form a mesa structure. A dielectric layer is deposited over the mesa structure, and the photoresist layer portion is dissolved thereby lifting off the dielectric portion overlying said second superconductive layer portion.
申请公布号 US4432134(A) 申请公布日期 1984.02.21
申请号 US19820376483 申请日期 1982.05.10
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 JONES, ADDISON B.;ERDMANN, FRANCIS M.
分类号 H01L39/24;(IPC1-7):H01L39/24;H01L39/22 主分类号 H01L39/24
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