发明名称 |
Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices |
摘要 |
A method of forming a superconductor-barrier-superconductor junction device by the steps of depositing a first superconductive layer on a substrate, forming a barrier layer on the first superconductive layer and depositing a second superconductive layer on the barrier layer. A layer of photoresist is then deposited over the second superconductive layer and patterned together with the second superconductive layer to form a mesa structure. A dielectric layer is deposited over the mesa structure, and the photoresist layer portion is dissolved thereby lifting off the dielectric portion overlying said second superconductive layer portion.
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申请公布号 |
US4432134(A) |
申请公布日期 |
1984.02.21 |
申请号 |
US19820376483 |
申请日期 |
1982.05.10 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
JONES, ADDISON B.;ERDMANN, FRANCIS M. |
分类号 |
H01L39/24;(IPC1-7):H01L39/24;H01L39/22 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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