发明名称 |
Moisture sensor and method of manufacturing the same |
摘要 |
A moisture sensor including a thin layer of tantalum oxide applied to a moisture insensitive substrate and at least two electrodes placed on the tantalum oxide layer spaced apart from each other wherein the tantalum oxide layer comprises the oxide of a highly resistive low density tantalum where the tantalum in the layer applied to the substrate has a density of less than 15 g/cm3.
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申请公布号 |
US4433319(A) |
申请公布日期 |
1984.02.21 |
申请号 |
US19810272065 |
申请日期 |
1981.06.09 |
申请人 |
ENDRESS U. HAUSER GMBH U. CO. |
发明人 |
LUEDER, ERNST;KALLFASS, TRAUGOTT |
分类号 |
H01C7/00;G01N27/12;G01N27/22;H01G7/00;(IPC1-7):H01L7/00 |
主分类号 |
H01C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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