发明名称 Moisture sensor and method of manufacturing the same
摘要 A moisture sensor including a thin layer of tantalum oxide applied to a moisture insensitive substrate and at least two electrodes placed on the tantalum oxide layer spaced apart from each other wherein the tantalum oxide layer comprises the oxide of a highly resistive low density tantalum where the tantalum in the layer applied to the substrate has a density of less than 15 g/cm3.
申请公布号 US4433319(A) 申请公布日期 1984.02.21
申请号 US19810272065 申请日期 1981.06.09
申请人 ENDRESS U. HAUSER GMBH U. CO. 发明人 LUEDER, ERNST;KALLFASS, TRAUGOTT
分类号 H01C7/00;G01N27/12;G01N27/22;H01G7/00;(IPC1-7):H01L7/00 主分类号 H01C7/00
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