| 摘要 |
PURPOSE:To obtain an aluminum wiring layer which as a flat surface by coating an aluminum layer when forming the layer on a semiconductor substrate, heat treating the layer to generate an aluminum hillock on the surface, providing a photosensitive resin in the valley between the hillocks, and removing by reactive ion etching part of th aluminum layer. CONSTITUTION:An SiO2 film 22 is covered on an Si wafer 21, an aluminum layer 23 of approx. 2.0mum thicker than the ordinary thickness is formed on the film 22, the wafer 21 is introduced into N2 atmosphere and heat treated. At this time the heat treating temperature is set at normal 450 deg.C, but the treating time is increased to 50min to 2hr so as to remove a damage by recrystallizing the layer 23. In this manner, many hillockes are formed on the surface of the layer 23, the valleys are buried with thin photosensitive resin 24, and the tops of the hillocks are first removed by reactive ion etching using chlorine gas. Subsequently, it is subsequently etched to remove the resin 24, the surface is flattened, etched with a mask 25, thereby obtaining an aluminum wiring layer 26 made of the layer 23. |
