| 摘要 |
PURPOSE:To improve the quality of each film, by evacuating a reaction tube contg. wafers, feeding an inert gas into the tube at a low flow rate to clean the tube, and feeding fixed quantities of reactive gases into the tube while evacuating the tube with a vacuum pump to form films on the wafers. CONSTITUTION:A reaction tube 1 contg. wafers W is evacuated, and an inert gas is fed into the tube 1 at a low flow rate from both sides of the tube 1 through a reactive feeding pipe 5 and a feeding pipe 11 to clean the inside of the tube 1. NH3 and SiH2Cl2 are then fed into the tube 1 through reactive gas feeding pipes 3, 5, respectively while evacuating the tube 1 with a pump 9. The reactive gases are reacted in a vapor phase at a constant temp. for a fixed time to form SiN films on the wafers W. |
