| 摘要 |
PURPOSE:To enable to scan the output beam of a laser by an element itself by variably enabling the density distribution of a drive current which is supplied to a plurality of laser oscillation regions which are formed in one semiconductor crystal. CONSTITUTION:N type GaAlAs layers 4a which form a hetero junction and active layers 5a which form a laser operation are alternately laminated on an N type GaAs substrate 3 which is formed of a stepped part 2 made of a thickness by removing part of a GaAlAs layer 1, thereby forming a plurality of double hetero junction structures. Simultaneously, a stepped part 6 can be formed by the stepped part 2 at the junction, P-N junctions 8a-8d are formed in the active layers 5a-5d in the stepped part 6 of a diffused layer 7, and hole injection electrodes 9a, 9b and electron injection electrodes 10a, 10b are respectively formed. With this structure, a drive current is sequentially flowed between one of the electrodes 9a, 9b and one of the electrodes 10a, 10b, thereby laterally operating an output beam from the junction 8a to the junction 3d. |
