发明名称 GLASS FOR COVERING SEMICONDUCTOR
摘要 PURPOSE:To obtain a glass adapted for the cover of a semiconductor by mixing ZnO-B2O2 powder with PbO-SiO2 glass powder of amorphous property containing specific % by weight of PbO at the specific ratio. CONSTITUTION:PbO-SiO3 glass powder mainly contains by weight % 40-70% of PbO, 20-50% of SiO2, 0-20% of Al2O3 and 0-15% of B2O3 and ZnO-B2O3 glass powder mainly contains by weight % 45-75% of ZnO, 15-35% of B2O3 and 2-25% of SiO2. The powder of the latter is mixed by up to 45% by weight with the powder of the former. The film formed of the obtained powder is adapted for an Si element in term of thermal expansion coefficient, does not contain detrimental impurities such as alkaline components, may be sealed at a temperature of 900 deg.C or lower, and the sealing strength may be improved.
申请公布号 JPS5932138(A) 申请公布日期 1984.02.21
申请号 JP19820143056 申请日期 1982.08.18
申请人 NIHON DENKI GLASS KK 发明人 SHIBUYA TAKEHIRO;HATANO KAZUO
分类号 H01L23/29;H01L21/316;H01L23/31 主分类号 H01L23/29
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